TY - JOUR
T1 - Deteriorated device characteristics in 3D-LSI caused by distorted silicon lattice
AU - Mariappan, Murugesan
AU - Imai, Yasuhiko
AU - Kimura, Shigeru
AU - Fukushima, Takafumi
AU - Bea, Ji Choel
AU - Kino, Hisashi
AU - Lee, Kang Wook
AU - Tanaka, Tetsu
AU - Koyanagi, Mitsumasa
N1 - Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2014/2
Y1 - 2014/2
N2 - Silicon-lattice distortion in the 50-μ-thick stacked large scale integrated circuit (LSI) chip over Cu-Sn μ-bumps was studied by synchrotron-assisted micro-X-ray diffraction. The top and bottom surfaces of the upper chip experienced 0.25% and 0.1% tensile strain (equivalent to 450 and 200 MPa of tensile stress), respectively. Si [004] plane showed a maximum tilt value of +0.45° and -0.25°, respectively, over the μ-bump and in the bump-space region. Raman spectroscopy revealed that upper stacked chip experienced ∼1000 MPa of tensile stress and ∼200 MPa of compressive stress, respectively, over the μ-bump and bump-space regions. Distorted Si-lattice in 3D-LSIs caused 4% and 12% change in ON-current characteristic for n- and p-MOSFET devices, respectively.
AB - Silicon-lattice distortion in the 50-μ-thick stacked large scale integrated circuit (LSI) chip over Cu-Sn μ-bumps was studied by synchrotron-assisted micro-X-ray diffraction. The top and bottom surfaces of the upper chip experienced 0.25% and 0.1% tensile strain (equivalent to 450 and 200 MPa of tensile stress), respectively. Si [004] plane showed a maximum tilt value of +0.45° and -0.25°, respectively, over the μ-bump and in the bump-space region. Raman spectroscopy revealed that upper stacked chip experienced ∼1000 MPa of tensile stress and ∼200 MPa of compressive stress, respectively, over the μ-bump and bump-space regions. Distorted Si-lattice in 3D-LSIs caused 4% and 12% change in ON-current characteristic for n- and p-MOSFET devices, respectively.
KW - 3D-large scale integrated circuit (LSI)
KW - Microbump
KW - Si-lattice distortion
UR - http://www.scopus.com/inward/record.url?scp=84893741667&partnerID=8YFLogxK
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U2 - 10.1109/TED.2013.2295463
DO - 10.1109/TED.2013.2295463
M3 - Article
AN - SCOPUS:84893741667
VL - 61
SP - 540
EP - 547
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 2
M1 - 6701183
ER -