Detection of Si - H bonds in silicon oxide by x-ray photoelectron spectrum difference

Hiroki Ogawa, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    52 Citations (Scopus)

    Abstract

    Detection of Si - H bonds in silicon oxide from the measurement of x-ray photoelectron spectrum difference is confirmed by the measurement of infrared absorption spectrum difference in the case of silicon native oxides formed during wet chemical treatments of atomically flat hydrogen terminated Si(111) surfaces. The desorption of hydrogen from native oxide is also found from x-ray photoelectron spectrum difference.

    Original languageEnglish
    Pages (from-to)577-579
    Number of pages3
    JournalApplied Physics Letters
    Volume61
    Issue number5
    DOIs
    Publication statusPublished - 1992

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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