Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering

Kohki Nagata, Atsushi Ogura, Ichiro Hirosawa, Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of the fabrication process conditions on the microstructure of silicon dioxide thin films of <10 nm thickness are presented. The microstructure was investigated using grazing-incidence wide and small-angle X-ray scattering methods with synchrotron radiation. The combination of a high brilliance light source and grazing incident configuration enabled the observation of very weak diffuse X-ray scattering from SiO2 thin films. The results revealed different microstructures, which were dependent on oxidizing species or temperature. The micro-level properties differed from bulk properties reported in the previous literature. It was indicated that these differences originate from inner stress. The detailed structure in an amorphous thin film was not revealed owing to detection difficulties.

Original languageEnglish
Article number154103
JournalJournal of Applied Physics
Volume119
Issue number15
DOIs
Publication statusPublished - 2016 Apr 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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