Detection of pinholes in R.F.-diode-sputtered SiO2 films

Takeo Hattori, Yutaka Utsugi, Hiroshi Yamauchi

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The amount of pinholes in r.f.-diode-sputtered SiO2 films was measured as a function of the thickness of these films by (a) measuring the conductance of amorphous carbon films deposited onto SiO2 films and (b) measuring the numbers of X-ray-excited photoelectrons coming through SiO2 films. The amount of pinholes in r.f.-diode-sputtered SiO2 films decreases exponentially with increasing thickness of the films.

    Original languageEnglish
    Pages (from-to)231-235
    Number of pages5
    JournalThin Solid Films
    Volume97
    Issue number3
    DOIs
    Publication statusPublished - 1982 Nov 19

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Detection of pinholes in R.F.-diode-sputtered SiO<sub>2</sub> films'. Together they form a unique fingerprint.

  • Cite this