Detection of molecular oxygen adsorbate during room-temperature oxidation of Si(100)2 ' 1 surface: In situ synchrotron radiation photoemission study

Akitaka Yoshigoe, Yoichi Yamada, Ryo Taga, Shuichi Ogawa, Yuji Takakuwa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Synchrotron radiation photoelectron spectroscopy during the oxidation of a Si(100)2 ' 1 surface at room temperature revealed the existence of molecularly adsorbed oxygen, which was considered to be absent. The O 1s spectrum of such oxidation was found to be similar to that of Si(111)7 ' 7 surface oxidation. Also, molecular oxygen appeared after the initial surface oxides were formed, indicating that it was not a precursor for dissociation oxygen adsorption on a clean surface. Considering this finding, we have proposed presumable structural models for atomic configurations, where molecular oxygen resided on the oxidized silicon with two oxygen atoms at the backbonds.

Original languageEnglish
Article number100307
JournalJapanese journal of applied physics
Volume55
Issue number10
DOIs
Publication statusPublished - 2016 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Detection of molecular oxygen adsorbate during room-temperature oxidation of Si(100)2 ' 1 surface: In situ synchrotron radiation photoemission study'. Together they form a unique fingerprint.

  • Cite this