Synchrotron radiation photoelectron spectroscopy during the oxidation of a Si(100)2 ' 1 surface at room temperature revealed the existence of molecularly adsorbed oxygen, which was considered to be absent. The O 1s spectrum of such oxidation was found to be similar to that of Si(111)7 ' 7 surface oxidation. Also, molecular oxygen appeared after the initial surface oxides were formed, indicating that it was not a precursor for dissociation oxygen adsorption on a clean surface. Considering this finding, we have proposed presumable structural models for atomic configurations, where molecular oxygen resided on the oxidized silicon with two oxygen atoms at the backbonds.
ASJC Scopus subject areas
- Physics and Astronomy(all)