Detection of interface states correlated with SiO2/Si(111) interface structures

N. Watanabe, Y. Teramoto, A. Omura, H. Nohira, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)


    The interface state densities near the midgap of an atomically flat Si(111) surface were measured as oxidation progressed. It was found that an anomalous decrease in interface state densities near the midgap was observed periodically in accordance with periodic changes in interface structures with the progress of oxidation. Therefore, interface state densities near the midgap closely related with interface structures were found. It is deduced from the correlation among the interface and surface structures and interface state density near the midgap of Si, that isolated Si3+ species is the possible origin of the interface states near the midgap of Si.

    Original languageEnglish
    Pages (from-to)460-464
    Number of pages5
    JournalApplied Surface Science
    Issue number1
    Publication statusPublished - 2000 Oct 9

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films
    • Condensed Matter Physics


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