Detection of characteristic signals from As-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction

Masami Terauchi, Kenji Tsuda, Kazuo Kawamura

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Characteristic signals were detected from As-doped (<1 at.%) regions of silicon by dark-field transmission electron microscopy and convergent-beam electron diffraction. A slight intensity increase was observed in 220 dark-field images, which may be explained by an increase of scattering amplitude due to the As doping. The doped region showed a much higher intensity in 004 dark-field images. The characteristic high intensity was observed for specimens with As concentrations of about 0.09-0.8 at.%. Convergent-beam electron diffraction patterns obtained from the As-doped region showed a characteristic rocking curve for 004 reflection. These characteristics should originate from incoherent elastically scattered electrons due to a static lattice distortion around the doped As atoms. The observed characteristics in dark-field images and rocking curves of the 004 reflection should be a good probe not only for investigating the concentration of doped atoms in Si lattice, but also for the amount of impurity and/or point defects in other crystalline materials.

Original languageEnglish
Pages (from-to)441-448
Number of pages8
JournalJournal of Electron Microscopy
Volume52
Issue number5
DOIs
Publication statusPublished - 2003

Keywords

  • As-doped Si wafer
  • Convergent-beam electron diffraction
  • Dark-field image
  • Incoherent elastic scattering
  • Lattice distortion
  • Rocking curve

ASJC Scopus subject areas

  • Instrumentation

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