Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents in nonmagnetic conductors. Here we study the spin-pumping-induced voltages due to the inverse spin Hall effect in permalloy/normal metal bilayers integrated into coplanar waveguides for different normal metals and as a function of angle of the applied magnetic field direction, as well as microwave frequency and power. We find good agreement between experimental data and a theoretical model that includes contributions from anisotropic magnetoresistance and inverse spin Hall effect. The analysis provides consistent results over a wide range of experimental conditions as long as the precise magnetization trajectory is taken into account. The spin Hall angles for Pt, Pd, Au, and Mo were determined with high precision to be 0.013±0.002, 0.0064±0.001, 0.0035±0.0003, and -0.0005±0.0001, respectively.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2010 Dec 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics