Detecting real oxygen ions in polycrystalline diamond thin film using secondary ion mass spectrometry

Tsubasa Nakagawa, Isao Sakaguchi, Hajime Haneda, Naoki Ohashi, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Oxygen in a polycrystalline diamond thin film grown by microwave-assisted chemical vapor deposition is evaluated by secondary ion mass spectrometry (SIMS). The depth profile of 16O measured as a function of the current density of a primary ion beam indicates a variation from a decrease in background intensity to an increase in oxygen intensity due to the signal from diamond. The oxygen concentration in a polycrystalline diamond thin film is 5 × 10-5 in 16O/13C. The method of analyzing the oxygen concentration in diamond is useful for developing diamond devices.

    Original languageEnglish
    Pages (from-to)3391-3393
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume46
    Issue number6 A
    DOIs
    Publication statusPublished - 2007 Jun 6

    Keywords

    • Chemical vapor deposition
    • Diamond
    • Oxygen
    • Secondary ion mass spectrometry

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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