Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlOx on the surface passivation of crystalline silicon

Hyunju Lee, Naomi Sawamoto, Norihiro Ikeno, Koji Arafune, Haruhiko Yoshida, Shin Ichi Satoh, Toyohiro Chikyow, Atsushi Ogura

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5 Citations (Scopus)

Abstract

The effects of interface properties such as a negative fixed charge density and an interface trap density on the surface passivation of crystalline Si by O3-based batch ALD AlOx were studied. High-quality surface passivation with Smax of ∼10cm/s was obtained from the AlO x samples deposited at 200 °C after annealing. This feature is attributed to the excellent field effect passivation by the high negative fixed charge density of ∼%5 ' 1012cm-2 and chemical passivation, which reduces the interface trap density to ∼1 ' 10 11 eV%1cm-2. The annealed AlOx samples deposited at 200 °C also show high thermal stability during firing at 850 °C. Additionally, we found that the formation of a thin SiOx interlayer is essential for the formation of a high negative fixed charge density that induces strong field effect passivation, and that defect passivation at the Si/SiOx interface by diffused hydrogen from AlOx layers is the origin of chemical passivation.

Original languageEnglish
Article number04ER06
JournalJapanese journal of applied physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - 2014 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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