Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements

A. Fukuyama; Y. Akashi; M. Suemitsu; T. Ikari

doi:10.1016/S0022-0248(99)00691-0

Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements

A. Fukuyama, Y. Akashi, M. Suemitsu, T. Ikari

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

To clarify the mechanism of the dip and hump during the photoquenching process observed in the time-dependent piezoelectric photoacoustic (PPA) signal, the PPA spectra were measured by changing the illumination time of the quenching-light of 1.12 eV at 80 K. It was found that a distinctive peak appeared around 1.1 eV and moved to higher photon energy side with increasing the illumination time. A contribution of the deep level that changes the activation energy during the photoquenching process is considered.

Original language	English
Pages (from-to)	255-259
Number of pages	5
Journal	Journal of Crystal Growth
Volume	210
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(99)00691-0
Publication status	Published - 2000 Mar 1
Event	8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn Duration: 1999 Sep 15 → 1999 Sep 18

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(99)00691-0

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title = "Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements",

abstract = "To clarify the mechanism of the dip and hump during the photoquenching process observed in the time-dependent piezoelectric photoacoustic (PPA) signal, the PPA spectra were measured by changing the illumination time of the quenching-light of 1.12 eV at 80 K. It was found that a distinctive peak appeared around 1.1 eV and moved to higher photon energy side with increasing the illumination time. A contribution of the deep level that changes the activation energy during the photoquenching process is considered.",

author = "A. Fukuyama and Y. Akashi and M. Suemitsu and T. Ikari",

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T1 - Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements

AU - Fukuyama, A.

AU - Akashi, Y.

AU - Suemitsu, M.

AU - Ikari, T.

PY - 2000/3/1

Y1 - 2000/3/1

N2 - To clarify the mechanism of the dip and hump during the photoquenching process observed in the time-dependent piezoelectric photoacoustic (PPA) signal, the PPA spectra were measured by changing the illumination time of the quenching-light of 1.12 eV at 80 K. It was found that a distinctive peak appeared around 1.1 eV and moved to higher photon energy side with increasing the illumination time. A contribution of the deep level that changes the activation energy during the photoquenching process is considered.

AB - To clarify the mechanism of the dip and hump during the photoquenching process observed in the time-dependent piezoelectric photoacoustic (PPA) signal, the PPA spectra were measured by changing the illumination time of the quenching-light of 1.12 eV at 80 K. It was found that a distinctive peak appeared around 1.1 eV and moved to higher photon energy side with increasing the illumination time. A contribution of the deep level that changes the activation energy during the photoquenching process is considered.

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DO - 10.1016/S0022-0248(99)00691-0

M3 - Conference article

AN - SCOPUS:0033873514

VL - 210

SP - 255

EP - 259

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

T2 - 8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors

Y2 - 15 September 1999 through 18 September 1999

ER -

Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements

Abstract

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