Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements

A. Fukuyama, Y. Akashi, Maki Suemitsu, T. Ikari

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

To clarify the mechanism of the dip and hump during the photoquenching process observed in the time-dependent piezoelectric photoacoustic (PPA) signal, the PPA spectra were measured by changing the illumination time of the quenching-light of 1.12 eV at 80 K. It was found that a distinctive peak appeared around 1.1 eV and moved to higher photon energy side with increasing the illumination time. A contribution of the deep level that changes the activation energy during the photoquenching process is considered.

Original languageEnglish
Pages (from-to)255-259
Number of pages5
JournalJournal of Crystal Growth
Volume210
Issue number1
DOIs
Publication statusPublished - 2000 Mar 1
Event8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn
Duration: 1999 Sep 151999 Sep 18

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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