Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Hideki Sako, Ai Hashimoto, Ryuichi Sugie, Yoshio Honda, Hiroshi Amano, Isamu Akasaki, Kazunobu Kojima, Shigefusa F. Chichibu

Research output: Contribution to journalArticlepeer-review

Abstract

To clarify the behavior of the AlGaN in 20 nm wide Ga-rich current pathways in an n-AlGaN layer, which assists carrier localization in AlGaN-based light-emitting diodes, we performed a detailed analysis using an n-Al0.7Ga0.3N layer on AlN with dense macrosteps on a 1.0 miscut sapphire substrate. Energy-dispersive X-ray spectra, obtained using cross-sectional scanning transmission electron microscopy calibrated by Rutherford backscattering and cross-sectional cathodoluminescence spectra, indicated that AlN mole fraction in the Ga-rich current pathways was nearly ∼2/3. This result is consistent with those of other research groups, suggesting that metastable Al2/3Ga1/3N is created in Ga-rich current pathways.

Original languageEnglish
Article number124001
JournalApplied Physics Express
Volume13
Issue number12
DOIs
Publication statusPublished - 2020 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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