TY - JOUR
T1 - Design of novel dilute magnetic semiconductors by exhaustive first-principles calculations and scale-bridging simulations
AU - Shinya, Hikari
AU - Kubota, Takaya
AU - Tanaka, Yuichiro
AU - Shirai, Masafumi
N1 - Funding Information:
The authors acknowledge financial support from the JST CREST (Grant Nos. JPMJCR1777 , JPMJCR18I2 , and JPMJCR17J5 ). In addition, H.S. thanks financial support from the “Project to Female Researchers”, Center for Gender Equality Promotion (TUMUG) , Tohoku University, and the Murata Science Foundation . Furthermore, H.S. thanks T. Fukushima and H. Katayama-Yoshida for their helpful discussions. We would like to thank Editage ( www.editage.com ) for English language editing.
Publisher Copyright:
© 2022 The Author(s)
PY - 2022/6
Y1 - 2022/6
N2 - Dilute magnetic semiconductors (DMSs) have attracted growing attention because of their potential advantages in semiconductor spintronics applications. However, as previous research has focused mostly on Mn-doped III–V semiconductors, little is known about other systems. Thus, to discover DMSs that are suitable for practical applications, an exhaustive search for zincblende-type DMSs was performed based on the Korringa–Kohn–Rostoker Green function method combined with the coherent potential approximation (KKR–CPA), and it was found that (Al,Cr)P and (Al,Cr)As maintained ferromagnetism at high temperatures. As the mean-field approximation significantly overestimates the Curie temperature by ignoring the magnetic percolation effect, a Monte Carlo simulation was performed to reproduce the experimental annealing procedure and estimate the Curie temperature using the random phase approximation, which considers the magnetic percolation effect. It was found that the Cr atoms in the AlP and AlAs host semiconductors gather together and form nanoclusters upon annealing based on attractive interactions. Furthermore, upon investigating how the annealing conditions affect the Curie temperature, it was found that the annealing temperature can modulate the density and size of the Cr nanoclusters, thereby controlling the Curie temperature. Moreover, it was deduced that the shapes of the nanoclusters could be changed by altering the dimensions of crystal growth. These results are essential to support materials manufacturing for next-generation semiconductor spintronics.
AB - Dilute magnetic semiconductors (DMSs) have attracted growing attention because of their potential advantages in semiconductor spintronics applications. However, as previous research has focused mostly on Mn-doped III–V semiconductors, little is known about other systems. Thus, to discover DMSs that are suitable for practical applications, an exhaustive search for zincblende-type DMSs was performed based on the Korringa–Kohn–Rostoker Green function method combined with the coherent potential approximation (KKR–CPA), and it was found that (Al,Cr)P and (Al,Cr)As maintained ferromagnetism at high temperatures. As the mean-field approximation significantly overestimates the Curie temperature by ignoring the magnetic percolation effect, a Monte Carlo simulation was performed to reproduce the experimental annealing procedure and estimate the Curie temperature using the random phase approximation, which considers the magnetic percolation effect. It was found that the Cr atoms in the AlP and AlAs host semiconductors gather together and form nanoclusters upon annealing based on attractive interactions. Furthermore, upon investigating how the annealing conditions affect the Curie temperature, it was found that the annealing temperature can modulate the density and size of the Cr nanoclusters, thereby controlling the Curie temperature. Moreover, it was deduced that the shapes of the nanoclusters could be changed by altering the dimensions of crystal growth. These results are essential to support materials manufacturing for next-generation semiconductor spintronics.
KW - Computational materials design
KW - First-principles
KW - Magnetic semiconductor
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U2 - 10.1016/j.mtcomm.2022.103604
DO - 10.1016/j.mtcomm.2022.103604
M3 - Article
AN - SCOPUS:85129947302
SN - 2352-4928
VL - 31
JO - Materials Today Communications
JF - Materials Today Communications
M1 - 103604
ER -