Design of majority logic gate for single-dopant device

Takahide Ova, Takahiro Shinada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper describes a majority logic gate circuit on a "single-dopant" device. The single-dopant device that has been receiving increasing attention in recent years is one of atomic scale solid-state device and can be a practical platform for a single-electron circuit. We here aim to fabricate actual single-dopant majority logic circuits with deterministic doping method. For this, we design a possible circuit on the device and test its operation by Monte Carlo simulation as a first step of this study. As results, we confirmed correct circuit operation and found that the device will have thermal-noise- and device-parameter-fluctuation-harnessing abilities. We believe that we will succeed to fabricate practical the single-dopant majority logic gate circuit in near future.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages151-152
Number of pages2
ISBN (Electronic)9784863486478
DOIs
Publication statusPublished - 2017 Dec 29
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 2017 Jun 42017 Jun 5

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Other

Other22nd Silicon Nanoelectronics Workshop, SNW 2017
CountryJapan
CityKyoto
Period17/6/417/6/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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