Design of majority logic gate for single-dopant device

Takahide Ova, Takahiro Shinada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


This paper describes a majority logic gate circuit on a "single-dopant" device. The single-dopant device that has been receiving increasing attention in recent years is one of atomic scale solid-state device and can be a practical platform for a single-electron circuit. We here aim to fabricate actual single-dopant majority logic circuits with deterministic doping method. For this, we design a possible circuit on the device and test its operation by Monte Carlo simulation as a first step of this study. As results, we confirmed correct circuit operation and found that the device will have thermal-noise- and device-parameter-fluctuation-harnessing abilities. We believe that we will succeed to fabricate practical the single-dopant majority logic gate circuit in near future.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9784863486478
Publication statusPublished - 2017 Dec 29
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 2017 Jun 42017 Jun 5

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017


Other22nd Silicon Nanoelectronics Workshop, SNW 2017

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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