Design of an 8-nsec 72-bit-parallel-search content-addressable memory using a phase-change device

Satoru Hanzawa, Takahiro Hanyu

Research output: Contribution to journalArticle

Abstract

This paper presents a content-addressable memory (CAM) using a phase-change device. A hierarchical match-line structure and a one-hot-spot block code are indispensable to suppress the resistance ratio of the phase-change device and the area overhead of match detectors. As a result, an 8-nsec 72-bit-parallel-search CAM is implemented using a phase-change-device/MOS-hybrid circuitry, where high and low resistances are higher than 2.3MΩ and lower than 97 kΩ, respectively, while maintaining one-day retention.

Original languageEnglish
Pages (from-to)1302-1310
Number of pages9
JournalIEICE Transactions on Electronics
VolumeE94-C
Issue number8
DOIs
Publication statusPublished - 2011 Aug

Keywords

  • CAM
  • Content addressable memory
  • Nonvolatile memory
  • One-hot coding
  • Parallel search
  • Phasechange device

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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