Design of a nine-transistor/two-magnetic-tunnel-junction-cell-based low-energy nonvolatile ternary content-addressable memory

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Towards a low search-energy nonvolatile ternary content-addressable memory (TCAM), we propose a novel nine-transistor/two-magnetic-tunneljunction (9T-2MTJ) nonvolatile TCAM cell circuit with a high-speed accessibility. Since critical path for switching in the TCAM cell circuit is only a single metal-oxide-semiconductor (MOS) transistor, switching delay of the TCAM word circuit is minimized. As a result, the worst-case switching delay of 0.22 ns is achieved in a 144-bit word circuit under a 90 nm complementary MOS (CMOS)/MTJ technology, which is about 2.6 times faster than that of a conventional CMOS-based TCAM. In order to minimize the active power dissipation in the proposed TCAM, a multi-level segmented match-line scheme that maximally brings inessential cells to standby state is also applied to the 9T-2MTJ-cell-based word circuit. Finally, low search-energy of 0.73 fJ/bit/search is achieved in a 144-bit × 256-word nonvolatile TCAM together with eliminating standby power using nonvolatility.

Original languageEnglish
Article number02BM06
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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