Abstract
A computational nonvolatile RAM (C-NVRAM), where magneto-resistive random access memory with spin-transfer torque magnetic tunnel junctions (STT-MTJs) is used as an on-chip storage element, combined with bit-parallel arithmetic modules is proposed for a greedy energy-efficient VLSI processors in the wide range of consumer electronics and mobile applications such as internet-of-things. A judicious combination of bit-serial/word-parallel (at a C-NVRAM) and bit-parallel processing manners makes the calculation cycles reduced in parallel computing such as an image processing. Moreover, since data-access rate of the MTJ-based nonvolatile memory is negligible (is only 1/104 percent of memory cell array), its power dissipation is dominated by its static power dissipation. Therefore, the use of nonvolatile memory makes the total power reduced greatly. As a typical application, it is demonstrated in parallel image processing with 8-bit-intensity 256×256 pixels that the energy (computing-time-power-dissipation product) of the proposed hardware is less than 1/15 in comparison with that of the corresponding CMOS-only-based one under a 90nm-CMOS/100nm-MTJ process technologies.
Original language | English |
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Title of host publication | IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 3283-3288 |
Number of pages | 6 |
ISBN (Electronic) | 9781479917624 |
DOIs | |
Publication status | Published - 2015 Jan 1 |
Event | 41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 - Yokohama, Japan Duration: 2015 Nov 9 → 2015 Nov 12 |
Other
Other | 41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 |
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Country/Territory | Japan |
City | Yokohama |
Period | 15/11/9 → 15/11/12 |
Keywords
- C-RAM
- hardware accelerator
- leakage current reduction
- logic-in-memory
- magnetic-tunneling-junction device
- parallel computing
- power gating
- SIMD
- STT-MRAM
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering