Design of a computational nonvolatile RAM for a greedy energy-efficient VLSI processor

Akira Mochizuki, Naoto Yube, Takahiro Hanyu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A computational nonvolatile RAM (C-NVRAM), where magneto-resistive random access memory with spin-transfer torque magnetic tunnel junctions (STT-MTJs) is used as an on-chip storage element, combined with bit-parallel arithmetic modules is proposed for a greedy energy-efficient VLSI processors in the wide range of consumer electronics and mobile applications such as internet-of-things. A judicious combination of bit-serial/word-parallel (at a C-NVRAM) and bit-parallel processing manners makes the calculation cycles reduced in parallel computing such as an image processing. Moreover, since data-access rate of the MTJ-based nonvolatile memory is negligible (is only 1/104 percent of memory cell array), its power dissipation is dominated by its static power dissipation. Therefore, the use of nonvolatile memory makes the total power reduced greatly. As a typical application, it is demonstrated in parallel image processing with 8-bit-intensity 256×256 pixels that the energy (computing-time-power-dissipation product) of the proposed hardware is less than 1/15 in comparison with that of the corresponding CMOS-only-based one under a 90nm-CMOS/100nm-MTJ process technologies.

Original languageEnglish
Title of host publicationIECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3283-3288
Number of pages6
ISBN (Electronic)9781479917624
DOIs
Publication statusPublished - 2015 Jan 1
Event41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 - Yokohama, Japan
Duration: 2015 Nov 92015 Nov 12

Other

Other41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015
CountryJapan
CityYokohama
Period15/11/915/11/12

Keywords

  • C-RAM
  • hardware accelerator
  • leakage current reduction
  • logic-in-memory
  • magnetic-tunneling-junction device
  • parallel computing
  • power gating
  • SIMD
  • STT-MRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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