Design of a compact nonvolatile four-input logic element using a magnetic tunnel junction and metal-oxide-semiconductor hybrid structure

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7 Citations (Scopus)

Abstract

A nonvolatile logic element (NV-LE) using a magnetic tunnel junction (MTJ) and metal-oxide-semiconductor (MOS)-hybrid structure is proposed for a high-density field-programmable gate array with an instant-on capability. Since the output current level of a multiplexer tree including MTJ devices is directly evaluated and amplified by a single differential amplifier on the final stage of the LUT circuit, the number of wasted sense amplifiers is greatly reduced and a compact 4-input NV-LE can be implemented. Moreover, the use of dynamic current-mode logic based circuitry makes it possible a high-speed operation with low-active power dissipation due to the elimination of steady current-path. In fact, the proposed 4- input NV-LE reduces transistor counts to 63% with no performance degradation compared to those of a conventional complementary-MOS- based implementation.

Original languageEnglish
Article number04DM02
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
Publication statusPublished - 2012 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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