Design of a 32.7-GHz Bandwidth AGC Amplifier IC with Wide Dynamic Range Implemented in SiGe HBT

Kenichi Ohhata, Tonu Masuda, Eiji Ohue, Katsuyoshi Washio

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB. The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s.

Original languageEnglish
Pages (from-to)1290-1297
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume34
Issue number9
DOIs
Publication statusPublished - 1999 Sep

Keywords

  • Automatic gain control (AGC) amplifier
  • SiGe heterojunction bipolar transistor (HBT)
  • optical transmission system

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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