@article{a3a9e60b62ed4a7598e900d909d52918,
title = "Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory",
abstract = "A novel 7-transistor/2-magnetic-tunnel-junction (7 T-2MTJ) cell circuit is proposed for a high-speed and compact nonvolatile ternary content-addressable memory (TCAM). Since critical path for switching in the TCAM cell circuit, which determines the performance of the TCAM, is only a single MOS transistor, switching delay of the TCAM word circuit is minimized. As a result, 270 ps of switching delay in 144-bit TCAM word circuit is achieved under a 90 nm CMOS/MTJ technology with magneto-resistance ratio of 100, which is about two times faster than a conventional CMOS-based TCAM.",
author = "Shoun Matsunaga and Akira Katsumata and Masanori Natsui and Tetsuo Endoh and Hideo Ohno and Takahiro Hanyu",
note = "Funding Information: This research is granted by the Japan Society for the Promotion of Science (JSPS) through the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program),” initiated by the Council for Science and Technology Policy (CSTP). This research is also supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",
year = "2012",
month = apr,
day = "1",
doi = "10.1063/1.3677875",
language = "English",
volume = "111",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",
}