Design concept for the high temperature photoelectronic devices using SrTiO3

Fumimasa Horikiri, Kazuhisa Sato, Keiji Yashiro, Tatsuya Kawada, Junichiro Mizusaki

Research output: Contribution to journalArticlepeer-review

Abstract

A quantum electronic discussion was made on the metal/ SrTiO3 heterostructure to obtain the design concept for the high temperature photoelectronic devices using SrTiO3. The current density ratios were calculated from the simulated values for the tunneling and the thermionic emission components of the electron transports across the heterointerface. The ratios indicate the required dopant concentrations to achieve Ohmic and Schottky contacts. The Wentzel-Kramers-Brillouin approximation and the Gamow transmission coefficient were used in the calculation of the tunneling transmission coefficient. The calculated results indicate that the tunneling transport of electrons across the heterointerface is predominant in a heavy 10 mol % doped substrate, whereas the thermionic emission is predominant in a 1 or 0.1 mol % doped substrate. It agrees with experimental results on the current-voltage characteristics at the metal/Nb-doped SrTiO3 single-crystal interfaces. The possibility of the high temperature photoelectronic devices using SrTiO3 was shown both in theoretical and experimental approaches.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number7
DOIs
Publication statusPublished - 2009 Jun 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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