Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT

Kenichi Ohhata, Toru Masuda, Eiji Ohue, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Carefully optimizing the peaking control and the self-aligned selective-epitaxial SiGe HBT allow the AGC amplifier IC with both wide bandwidth of 32.7 GHz and wide input dynamic-range of 19 dB.

Original languageEnglish
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Editors Anon
PublisherIEEE
Pages39-42
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: 1998 Sep 271998 Sep 29

Other

OtherProceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period98/9/2798/9/29

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ohhata, K., Masuda, T., Ohue, E., & Washio, K. (1998). Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT. In Anon (Ed.), Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 39-42). IEEE.