Abstract
Carefully optimizing the peaking control and the self-aligned selective-epitaxial SiGe HBT allow the AGC amplifier IC with both wide bandwidth of 32.7 GHz and wide input dynamic-range of 19 dB.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 39-42 |
| Number of pages | 4 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA Duration: 1998 Sep 27 → 1998 Sep 29 |
Other
| Other | Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
|---|---|
| City | Minneapolis, MN, USA |
| Period | 98/9/27 → 98/9/29 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Ohhata, K., Masuda, T., Ohue, E., & Washio, K. (1998). Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT. In Anon (Ed.), Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 39-42). IEEE.