Design and fabrication of terahertz detectors based on 180-nm CMOS process technology

Kosuke Wakita, Eiichi Sano, Masayuki Ikebe, Stevanus Arnold, Taiichi Otsuji, Yuma Takida, Hiroaki Minamide

Research output: Contribution to journalArticlepeer-review

Abstract

A CMOS cascode amplifier, biased near the threshold voltage of a MOSFET, for terahertz direct detection is proposed. A CMOS terahertz imaging circuit (size: 250 × 180 ìm) is designed and fabricated on the basis of low-cost 180-nm CMOS process technology. The imaging circuit consists of a microstrip patch antenna, an impedance-matching circuit, and a direct detector. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz1/2 at a modulation frequency of 31 Hz. NEP is estimated to be reduced to 42 pW/Hz1/2 at 100 kHz. These results suggest that cost-efficient terahertz imaging is possible in the near future.

Original languageEnglish
Article number1640014
JournalInternational Journal of High Speed Electronics and Systems
Volume25
Issue number3-4
DOIs
Publication statusPublished - 2016 Sep 1

Keywords

  • CMOS
  • NEP
  • THz
  • detector
  • direct detection
  • envelope detection
  • imaging
  • microstrip antenna
  • on-chip patch antenna
  • responsivity
  • terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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