Abstract
A compact nonvolatile programmable switch (NVPS) using 90nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip.
Original language | English |
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Article number | 17B742 |
Journal | Journal of Applied Physics |
Volume | 115 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2014 May 7 |
ASJC Scopus subject areas
- Physics and Astronomy(all)