Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching

Vu Ngoc Hung, Nguyen Van Minh, Le Van Minh, Nguyen Huu Hung, Chu Manh Hoang, Dzung Viet Dao, Ranjith Amarasinghe, Bui Thanh Tung, Susumu Sugiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents the design and the fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. Finite element method (FEM) using the ANSYS program has been applied to study the mechanical and electrical behavior of the device. The fabricated sensor with the dimension 1 × 1 × 0.45 mm3 can detect simultaneously three components of the linear acceleration at the frequency bandwidth 100 Hz.

Original languageEnglish
Title of host publicationPhysics and Engineering of New Materials
EditorsH.C.Klaus Wandelt, Do Tran Cat, Annemarie Pucci
PublisherSpringer Science and Business Media, LLC
Pages377-383
Number of pages7
ISBN (Print)9783540882008
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event10th German-Vietnamese Seminar on Physics and Engineering, GVS 2007 - Bonn, Germany
Duration: 2007 Jun 62007 Jun 9

Publication series

NameSpringer Proceedings in Physics
Volume127
ISSN (Print)0930-8989
ISSN (Electronic)1867-4941

Other

Other10th German-Vietnamese Seminar on Physics and Engineering, GVS 2007
Country/TerritoryGermany
CityBonn
Period07/6/607/6/9

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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