We have developed a new analytical method, which we call the glancing-incidence and glancing-takeoff x-ray fluorescence (GIT-XRF) method. In this method, a fluorescent x ray is measured at various combinations of incident and takeoff angles. A nondestructive depth profiling is possible by using this GIT-XRF method, because the effective observation depth is changed by both the incident and takeoff angles. Here, we introduce the idea of depth profiling using the GIT-XRF method, and then we apply this method to an Au-Si interface reaction.
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