Abstract
The authors report on the potential profiling in depth for promising oxide heterojunctions: La 0.6Sr 0.4MnO 3 (LSMO)/Nb-doped SrTiO 3 (Nb:STO) having different interfacial terminating layer and SrRuO 3/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO 2-Nb:STO interfaces with -La 0.6Sr 0.4O/TiO 2/SrO- structure reveals the existence of a certain thin depletion layer of 1-2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a -SrO/TiO 2/SrO- terminating layer. These results suggest that the adjacency of TiO 2 layer with La 0.6Sr 0.4O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.
| Original language | English |
|---|---|
| Article number | 165108 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 85 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2012 Apr 6 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Minohara, M., Horiba, K., Kumigashira, H., Ikenaga, E., & Oshima, M. (2012). Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 85(16), [165108]. https://doi.org/10.1103/PhysRevB.85.165108