Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy

M. Minohara; K. Horiba; H. Kumigashira; E. Ikenaga; M. Oshima

doi:10.1103/PhysRevB.85.165108

Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy

M. Minohara, K. Horiba, H. Kumigashira, E. Ikenaga, M. Oshima

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The authors report on the potential profiling in depth for promising oxide heterojunctions: La _0.6Sr _0.4MnO ₃ (LSMO)/Nb-doped SrTiO ₃ (Nb:STO) having different interfacial terminating layer and SrRuO ₃/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO ₂-Nb:STO interfaces with -La _0.6Sr _0.4O/TiO ₂/SrO- structure reveals the existence of a certain thin depletion layer of 1-2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a -SrO/TiO ₂/SrO- terminating layer. These results suggest that the adjacency of TiO ₂ layer with La _0.6Sr _0.4O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.

Original language	English
Article number	165108
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	85
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.85.165108
Publication status	Published - 2012 Apr 6
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.85.165108

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title = "Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy",

abstract = "The authors report on the potential profiling in depth for promising oxide heterojunctions: La 0.6Sr 0.4MnO 3 (LSMO)/Nb-doped SrTiO 3 (Nb:STO) having different interfacial terminating layer and SrRuO 3/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO 2-Nb:STO interfaces with -La 0.6Sr 0.4O/TiO 2/SrO- structure reveals the existence of a certain thin depletion layer of 1-2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a -SrO/TiO 2/SrO- terminating layer. These results suggest that the adjacency of TiO 2 layer with La 0.6Sr 0.4O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.",

author = "M. Minohara and K. Horiba and H. Kumigashira and E. Ikenaga and M. Oshima",

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AU - Minohara, M.

AU - Horiba, K.

AU - Kumigashira, H.

AU - Ikenaga, E.

AU - Oshima, M.

PY - 2012/4/6

Y1 - 2012/4/6

N2 - The authors report on the potential profiling in depth for promising oxide heterojunctions: La 0.6Sr 0.4MnO 3 (LSMO)/Nb-doped SrTiO 3 (Nb:STO) having different interfacial terminating layer and SrRuO 3/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO 2-Nb:STO interfaces with -La 0.6Sr 0.4O/TiO 2/SrO- structure reveals the existence of a certain thin depletion layer of 1-2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a -SrO/TiO 2/SrO- terminating layer. These results suggest that the adjacency of TiO 2 layer with La 0.6Sr 0.4O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.

AB - The authors report on the potential profiling in depth for promising oxide heterojunctions: La 0.6Sr 0.4MnO 3 (LSMO)/Nb-doped SrTiO 3 (Nb:STO) having different interfacial terminating layer and SrRuO 3/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO 2-Nb:STO interfaces with -La 0.6Sr 0.4O/TiO 2/SrO- structure reveals the existence of a certain thin depletion layer of 1-2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a -SrO/TiO 2/SrO- terminating layer. These results suggest that the adjacency of TiO 2 layer with La 0.6Sr 0.4O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.

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Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy

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