DEPTH PROFILING OF SILICON NITRIDE FILMS PREPARED BY PLASMA ANODIZATION.

H. Zama, M. Hara, T. Suzuki, T. Hattori, M. Hirayama, T. Matsukawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    X-ray photoelectron spectroscopy has been used to study the chemical structures of silicon nitride films prepared by plasma anodization. The Si//3N//4/Si interface was studied by chemical depth profiling. It is found that SiO//xN//y exists within 3 nm of the interface and at the surface, but with nearly ideal silicon nitride in the rest of the film. Nearly the same distribution of SiO//xN//y near the interface is found for all films with thickness range from 5. 6 to 15. 6 nm. Possible mechanism of plasma anodic nitridation which can explain these results are discussed.

    Original languageEnglish
    Title of host publicationConference on Solid State Devices and Materials
    PublisherBusiness Cent for Academic Soc Japan
    Pages237-240
    Number of pages4
    ISBN (Print)493081314X
    Publication statusPublished - 1986

    Publication series

    NameConference on Solid State Devices and Materials

    ASJC Scopus subject areas

    • Engineering(all)

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