DEPTH PROFILING OF Si-SiO//2 INTERFACE STRUCTURES.

Toshihisa Suzuki, Masaaki Muto, Motohiro Hara, Kikuo Yamabe, Takeo Hattori

    Research output: Chapter in Book/Report/Conference proceedingChapter

    53 Citations (Scopus)

    Abstract

    The Si-SiO//2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling. The applicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
    Pages544-551
    Number of pages8
    Volume25
    Edition4
    Publication statusPublished - 1986 Apr

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Suzuki, T., Muto, M., Hara, M., Yamabe, K., & Hattori, T. (1986). DEPTH PROFILING OF Si-SiO//2 INTERFACE STRUCTURES. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes (4 ed., Vol. 25, pp. 544-551)