Depth profiling of plasma anodized SiO2/Si interface structures by using X-ray photoelectron spectroscopy

Kakutaro Suda, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The chemical structures of Si-SiO2 interfaces formed by plasma anodization were investigated from the depth profiling measurements of Si 2p photoelectron spectra. For the region in the oxide less than 5 nm from the interface, the interface structures are the same as those for thermal oxides. However, for the region in the oxide more than 5 nm from the interface, the amounts of suboxides are larger as compared with those for thermal oxides. The structural difference was not found between the plasma anodic oxides formed on crystalline silicon and those formed on hydrogenated amorphous silicon.

    Original languageEnglish
    Pages (from-to)652-656
    Number of pages5
    JournalSurface Science
    Volume168
    Issue number1-3
    DOIs
    Publication statusPublished - 1986 Mar 3

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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