Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy

K. Nishizaki, H. Nohira, K. Takahashi, N. Kamakura, Y. Takata, S. Shin, K. Kobayashi, N. Tamura, K. Hikazutani, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Depth profiling of oxynitride film formed on Si(100) was investigated by photon energy dependent photoelectron spectroscopy. Si 2p and N 1s spectra arising from a oxynitride film formed on Si(100) surface were measured in the photon energy range from 556 to 1471 eV. It was found that the photon energy dependence of N 1s and Si 2p photoelectron spectra can be reproduced if the depth profile of nitrogen atoms is also known.

    Original languageEnglish
    Pages (from-to)287-290
    Number of pages4
    JournalApplied Surface Science
    Volume216
    Issue number1-4 SPEC.
    DOIs
    Publication statusPublished - 2003 Jun 30

    Keywords

    • Depth profiling
    • Oxynitride
    • Photoelectron spectroscopy
    • Synchrotron radiation

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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