The elastic recoil detection technique of transmission geometry using 4He ion beams has been developed to measure the whole profile of hydrogen isotopes in thin films. As an application of this technique, the retention behavior of D atoms under D implantation has been observed in situ on Ti and Al films. On the Ti films, a flat distribution of D was observed at the beginning of the implantation. At higher implantation fluences, however, the surface segregation of D was clearly recognized. On the Al films we examined the re-emission and permeation behavior of the implanted D atoms at various temperatures.
ASJC Scopus subject areas
- Nuclear and High Energy Physics