Depth profiling of chemical bonding states of impurity atoms and their correlation with electrical activity in Si shallow junctions

Kazuo Tsutsui, Norifumi Hoshino, Yasumasa Nakagawa, Masaoki Tanaka, Hiroshi Nohira, Kuniyuki Kakushima, Parhat Ahemt, Yuichiro Sasaki, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Chemical bonding states of doped impurities such as B, As, P and Sb in Si were analyzed by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state is assined to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for each donor type impurity (As, P and Sb), however, these two states could not be necessarily correlated with the electrically activated and deactivated atoms.

Original languageEnglish
Title of host publicationIWJT-2010
Subtitle of host publicationExtended Abstracts - 2010 International Workshop on Junction Technology
Pages174-177
Number of pages4
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event10th International Workshop on Junction Technology, IWJT-2010 - Shanghai, China
Duration: 2010 May 102010 May 11

Publication series

NameIWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology

Other

Other10th International Workshop on Junction Technology, IWJT-2010
CountryChina
CityShanghai
Period10/5/1010/5/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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