Depth profiles of aluminum component in sequential infiltration synthesis-treated electron beam resist films analyzed by time-of-flight secondary ion mass spectrometry

Shunya Ito, Yuki Ozaki, Takahiro Nakamura, Masaru Nakagawa

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    Sequential infiltration synthesis (SIS) is a promising method for organic-inorganic hybridization of organic polymer resist films in nanolithography. The understanding of the distribution of inorganic components in hybrid films is necessary for the practical use of SIS-treated resist films. In this study, we investigated the distribution of aluminum oxide in SIS-treated positive-tone electron beam resist films of poly(methyl methacrylate) and ZEP520A with thicknesses of 100, 40, and 20 nm by time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS profiles revealed that the aluminum species of AlO- and AlO2 - derived from aluminum oxide existed heterogeneously near the air/polymer surface, film inside, and polymer/substrate interface, and the distributions of respective species depended on film thickness. TOF-SIMS enabled the characterization of aluminum distribution in 20 nm thick resist films. It was suggested that the oxidation states of Al components were different between near the air/polymer surface and near the polymer/substrate interface.

    Original languageEnglish
    Article numberSIIC03
    JournalJapanese journal of applied physics
    Volume59
    Issue numberSI
    DOIs
    Publication statusPublished - 2020

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint

    Dive into the research topics of 'Depth profiles of aluminum component in sequential infiltration synthesis-treated electron beam resist films analyzed by time-of-flight secondary ion mass spectrometry'. Together they form a unique fingerprint.

    Cite this