Deposition rates of titanium nitride plates prepared by chemical vapour deposition of TiCl4+NH3 system

C. C. Jiang, Takashi Goto, T. Hirai

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4 Citations (Scopus)


Titanium nitride plates (TiNx, x = 0.74-1.0, about 2 mm thick maximum) were prepared by chemical vapour deposition (CVD) using TiCI4, NH3 and H2 as source gases. The effects of CVD conditions, i.e. gas molar ratio (mN/Ti = NH3/TiCI4) and deposition temperature (Tdep), on deposition rates and surface morphology were examined, and the deposition mechanism of the CVD-TiNx plates was discussed. The relationship between mN/Ti and deposition rates showed a maximum peak at certain mN/Ti, and this maximum peak shifted to lower mN/Ti with increasingTdep. The activation energy for the formation of CVD-TiNx plates was about 80 kJ mol-1 in the lower temperature range. The decomposition reaction of NH3 gas could be associated with the rate-controlling step. At higher temperatures, the diffusion process may be the rate-controlling step, and a large amount of powder (mainly NH4Cl) was formed in the gas phase. The highest deposition rate obtained in the present work was 1.06×10-7 ms-1 (0.38 mmh-1) at Tdep = 1773 K and mN/Ti = 0.87.

Original languageEnglish
Pages (from-to)6446-6449
Number of pages4
JournalJournal of Materials Science
Issue number23
Publication statusPublished - 1993 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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