Deposition process of W onto a-Si:H observed in-situ with polarization modulation IR and quadrupole mass spectroscopies

T. Wadayama, H. Shibata, T. Ohtani, A. Hatta

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The reaction processes of WF6 with photochemically deposited a-Si:H films were studied in situ by polarization modulation IR spectroscopy and quadrupole mass spectrometry. The IR bands due to the hydrogenated silicon species (-SiH3 and -SiH2) incorporated in the film decreased in intensity during the exposure to WF6. Irrespective on the exposure temperature, the intensity reduction rates of the -SiH3 species were much larger than those of the -SiH2 species. Gas-phase analysis revealed that the evolution of hydrogen into the gas phase took place prior to that of silicon fluorides. Inductively coupled plasma analysis showed that the weight of W deposited on the substrate increased steeply just after the beginning of the exposure, then tended to be saturated beyond the exposure time at which the IR bands due to the -SiH3 species almost disappeared. These results indicate that WF6 reacts preferentially with the -SiH3 species present in the hydrogen-rich surface layer and further deposition reaction is strongly suppressed by the W layer formed on the surface.

Original languageEnglish
Pages (from-to)93-98
Number of pages6
JournalApplied Surface Science
Volume78
Issue number1
DOIs
Publication statusPublished - 1994 May 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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