Deposition of tantalum oxide thin film by laser ablation

Nobuaki Sato, Junichi Hasegawa, Masato Nakazawa, Kohta Yamada, Takeo Fujino

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta2O5 target using Nd:YAG pulse laser. Deposition was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 μm thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as δ Ta-O by X-ray diffraction, was oxidized to Ta2O5 by the heat treatment in air at 1273 K for 3 h.

Original languageEnglish
Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages311-314
Number of pages4
Publication statusPublished - 2000 Dec 1
EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA, United States
Duration: 2000 Nov 52000 Nov 8

Other

OtherProceedings of the Second International Conference on Processing Materials for Properties
CountryUnited States
CitySan Francisco, CA
Period00/11/500/11/8

ASJC Scopus subject areas

  • Engineering(all)

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