Abstract
Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta2O5 target using Nd:YAG pulse laser. Deposition was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 μm thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as δ Ta-O by X-ray diffraction, was oxidized to Ta2O5 by the heat treatment in air at 1273 K for 3 h.
Original language | English |
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Title of host publication | Proceedings of the Second International Conference on Processing Materials for Properties |
Editors | B. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi |
Pages | 311-314 |
Number of pages | 4 |
Publication status | Published - 2000 Dec 1 |
Event | Proceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA, United States Duration: 2000 Nov 5 → 2000 Nov 8 |
Other
Other | Proceedings of the Second International Conference on Processing Materials for Properties |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 00/11/5 → 00/11/8 |
ASJC Scopus subject areas
- Engineering(all)