Deposition of tantalum oxide thin film by laser ablation

Nobuaki Sato; Junichi Hasegawa; Masato Nakazawa; Kohta Yamada; Takeo Fujino

Deposition of tantalum oxide thin film by laser ablation

Nobuaki Sato, Junichi Hasegawa, Masato Nakazawa, Kohta Yamada, Takeo Fujino

Center for Mineral Processing and Metallurgy (CMPM)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta₂O₅ target using Nd:YAG pulse laser. Deposition was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 μm thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as δ Ta-O by X-ray diffraction, was oxidized to Ta₂O₅ by the heat treatment in air at 1273 K for 3 h.

Original language	English
Title of host publication	Proceedings of the Second International Conference on Processing Materials for Properties
Editors	B. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages	311-314
Number of pages	4
Publication status	Published - 2000 Dec 1
Event	Proceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA, United States Duration: 2000 Nov 5 → 2000 Nov 8

Other

Other	Proceedings of the Second International Conference on Processing Materials for Properties
Country/Territory	United States
City	San Francisco, CA
Period	00/11/5 → 00/11/8

ASJC Scopus subject areas

Engineering(all)

Cite this

Sato, N, Hasegawa, J, Nakazawa, M, Yamada, K & Fujino, T 2000, Deposition of tantalum oxide thin film by laser ablation. in B Mishra, C Yamauchi, B Mishra & C Yamauchi (eds), Proceedings of the Second International Conference on Processing Materials for Properties. pp. 311-314, Proceedings of the Second International Conference on Processing Materials for Properties, San Francisco, CA, United States, 00/11/5.

@inproceedings{d3406f6714594386bbb692ba83e58912,

title = "Deposition of tantalum oxide thin film by laser ablation",

abstract = "Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta2O5 target using Nd:YAG pulse laser. Deposition was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 μm thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as δ Ta-O by X-ray diffraction, was oxidized to Ta2O5 by the heat treatment in air at 1273 K for 3 h.",

author = "Nobuaki Sato and Junichi Hasegawa and Masato Nakazawa and Kohta Yamada and Takeo Fujino",

year = "2000",

month = dec,

day = "1",

language = "English",

isbn = "087339495X",

pages = "311--314",

editor = "B. Mishra and C, Yamauchi and B. Mishra and C. Yamauchi",

booktitle = "Proceedings of the Second International Conference on Processing Materials for Properties",

note = "Proceedings of the Second International Conference on Processing Materials for Properties ; Conference date: 05-11-2000 Through 08-11-2000",

}

TY - GEN

T1 - Deposition of tantalum oxide thin film by laser ablation

AU - Sato, Nobuaki

AU - Hasegawa, Junichi

AU - Nakazawa, Masato

AU - Yamada, Kohta

AU - Fujino, Takeo

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta2O5 target using Nd:YAG pulse laser. Deposition was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 μm thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as δ Ta-O by X-ray diffraction, was oxidized to Ta2O5 by the heat treatment in air at 1273 K for 3 h.

AB - Tantalum oxide thin films were deposited on quartz substrates by laser ablation of Ta2O5 target using Nd:YAG pulse laser. Deposition was observed when a laser light energy higher than 200 mJ and its repetition rate higher than 3 Hz. A thin film of 0.1 μm thickness was obtained by the ablation using a laser light of 300 mJ and 6 Hz for 2 sec. The thickness of the film increased with increasing energy, repetition rate and irradiation time of laser. By the SEM observation, it was found that many island-like particles were deposited on quartz substrate forming a thin film. The obtained thin film, which was identified as δ Ta-O by X-ray diffraction, was oxidized to Ta2O5 by the heat treatment in air at 1273 K for 3 h.

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M3 - Conference contribution

AN - SCOPUS:0034592582

SN - 087339495X

SP - 311

EP - 314

BT - Proceedings of the Second International Conference on Processing Materials for Properties

A2 - Mishra, B.

A2 - Yamauchi, C,

A2 - Mishra, B.

A2 - Yamauchi, C.

T2 - Proceedings of the Second International Conference on Processing Materials for Properties

Y2 - 5 November 2000 through 8 November 2000

ER -

Deposition of tantalum oxide thin film by laser ablation

Abstract

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ASJC Scopus subject areas

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