Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Deposition of silicon dioxide films on fluorinated amorphous carbon films (a-C:F) for low dielectric constant interlayer dielectrics was investigated. Both SiO2 and a-C:F films were deposited by helicon wave plasma enhanced chemical vapor deposition with C4F8 for a-C:F and SiH4+O2 mixtures for SiO2. The SiO2 films on the a-C:F films peeled off soon after deposition. However, the peeling was suppressed by inserting a thin a-C:H buffer layer grown from CH4 between them. The adhesion between the films was increased by making the stoichiometry of SiO2 Si-rich. It was found that the Si-C bonds formed at the interface increased the adhesion.

Original languageEnglish
Pages (from-to)1078-1079
Number of pages2
JournalApplied Physics Letters
Volume70
Issue number9
DOIs
Publication statusPublished - 1997 Mar 3
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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