Abstract
Phosphorus doped silicon films are deposited in the temperature range 520–665°C by thermal decomposition of Si2H6. It is found that (i) the deposition rate is not decreased by the addition of PH3in contrast with the deposition rate for the SiH4system and is about 100 times higher than that for the SiH4system for phosphorus concentration above 1×1020cm-3, (ii) phosphorus concentration is proportional to the PH3partial pressure and to the –3/2 power of Si2H6partial pressure. These characteristics mean that Si2H6is suitable as a source gas to prepare the heavily phosphorus doped polycrystalline silicon for fabricating gate or emitter electrodes of LSI's.
| Original language | English |
|---|---|
| Pages (from-to) | L493-L495 |
| Journal | Japanese journal of applied physics |
| Volume | 23 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1984 Jan 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Nakayama, S., Yonezawa, H., & Murota, J. (1984). Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane. Japanese journal of applied physics, 23(7), L493-L495. https://doi.org/10.1143/JJAP.23.L493