Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane

Satoshi Nakayama, Hiroki Yonezawa, Junichi Murota

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


Phosphorus doped silicon films are deposited in the temperature range 520–665°C by thermal decomposition of Si2H6. It is found that (i) the deposition rate is not decreased by the addition of PH3in contrast with the deposition rate for the SiH4system and is about 100 times higher than that for the SiH4system for phosphorus concentration above 1×1020cm-3, (ii) phosphorus concentration is proportional to the PH3partial pressure and to the –3/2 power of Si2H6partial pressure. These characteristics mean that Si2H6is suitable as a source gas to prepare the heavily phosphorus doped polycrystalline silicon for fabricating gate or emitter electrodes of LSI's.

Original languageEnglish
Pages (from-to)L493-L495
JournalJapanese journal of applied physics
Issue number7
Publication statusPublished - 1984 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane'. Together they form a unique fingerprint.

Cite this