Deposition of microcrystalline Si1-xGex by magnetron sputtering

A. Hiroe, T. Goto, A. Teramoto, T. Ohmi

Research output: Contribution to conferencePaper

Abstract

Microcrystalline Si1xGex(x∼0.8) films have been successfully deposited by RF magnetron sputtering. Detailed investigations on the deposition behavior were carried out and it was found out that threshold temperature for crystalline phase formation is about 300°C. Substrate bias effect on deposition behavior was also investigated.

Original languageEnglish
Pages99-102
Number of pages4
Publication statusPublished - 2008 Dec 1
Event15th International Display Workshops, IDW '08 - Niigata, Japan
Duration: 2008 Dec 32008 Dec 5

Other

Other15th International Display Workshops, IDW '08
CountryJapan
CityNiigata
Period08/12/308/12/5

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Hiroe, A., Goto, T., Teramoto, A., & Ohmi, T. (2008). Deposition of microcrystalline Si1-xGex by magnetron sputtering. 99-102. Paper presented at 15th International Display Workshops, IDW '08, Niigata, Japan.