@inproceedings{abe67369e6b1496697f60bc599837e35,
title = "Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure",
abstract = "Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150°C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180°C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy. copyright The Electrochemical Society.",
author = "M. Matsumoto and M. Suemitsu and T. Yara and S. Nakajima and T. Uehara and Y. Toyoshima and S. Itou",
year = "2006",
doi = "10.1149/1.2356344",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "119--124",
booktitle = "Thin Film Transistor Technology",
edition = "8",
note = "Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}