Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure

M. Matsumoto; M. Suemitsu; T. Yara; S. Nakajima; T. Uehara; Y. Toyoshima; S. Itou

doi:10.1149/1.2356344

Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure

M. Matsumoto, M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima, S. Itou

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150°C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH₄ diluted in H₂, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180°C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	119-124
Number of pages	6
Journal	ECS Transactions
Volume	3
Issue number	8
DOIs	https://doi.org/10.1149/1.2356344
Publication status	Published - 2006 Dec 1
Event	Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

ASJC Scopus subject areas

Engineering(all)

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title = "Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure",

abstract = "Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150°C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180°C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy. copyright The Electrochemical Society.",

author = "M. Matsumoto and M. Suemitsu and T. Yara and S. Nakajima and T. Uehara and Y. Toyoshima and S. Itou",

year = "2006",

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doi = "10.1149/1.2356344",

language = "English",

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journal = "ECS Transactions",

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note = "Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

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T1 - Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure

AU - Matsumoto, M.

AU - Suemitsu, M.

AU - Yara, T.

AU - Nakajima, S.

AU - Uehara, T.

AU - Toyoshima, Y.

AU - Itou, S.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150°C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180°C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy. copyright The Electrochemical Society.

AB - Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150°C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180°C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy. copyright The Electrochemical Society.

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T2 - Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting

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