Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure

M. Matsumoto, M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima, S. Itou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150°C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180°C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationThin Film Transistor Technology
PublisherElectrochemical Society Inc.
Pages119-124
Number of pages6
Edition8
ISBN (Electronic)1566775086
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventThin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number8
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherThin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • Engineering(all)

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