Deposition of BN thin films onto Si(1 0 0) substrate by PLD with nanosecond and femtosecond pulses in nitrogen gas background

C. R. Luculescu; H. Miyake; S. Sato

doi:10.1016/S0169-4332(02)00325-2

Deposition of BN thin films onto Si(1 0 0) substrate by PLD with nanosecond and femtosecond pulses in nitrogen gas background

C. R. Luculescu, H. Miyake, S. Sato

Division of Process and System Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

BN thin films were deposited using pulsed laser deposition (PLD) by irradiating a hot-pressed h-BN target with a fourth harmonic wave of a Nd:YAG laser and a fundamental wave of a Ti:Sapphire laser in a background of nitrogen gas atmosphere without any aid of energetic techniques. Si(1 0 0) wafers with smooth and chemically etched surface were used as substrates. The films were characterized by SEM, XPS and FTIR. It was found that the cubic phase is present only in BN films deposited with UV nanosecond pulses. The absence of cubic phase in BN films deposited by femtosecond ablation is supposed to be due to high laser irradiance which causes the removal of unevaporated material from a soft target such as h-BN.

Original language	English
Pages (from-to)	499-504
Number of pages	6
Journal	Applied Surface Science
Volume	197
Issue number	198
DOIs	https://doi.org/10.1016/S0169-4332(02)00325-2
Publication status	Published - 2002 Jan 1

Keywords

Femtosecond laser pulse
PLD
c-BN

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(02)00325-2

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abstract = "BN thin films were deposited using pulsed laser deposition (PLD) by irradiating a hot-pressed h-BN target with a fourth harmonic wave of a Nd:YAG laser and a fundamental wave of a Ti:Sapphire laser in a background of nitrogen gas atmosphere without any aid of energetic techniques. Si(1 0 0) wafers with smooth and chemically etched surface were used as substrates. The films were characterized by SEM, XPS and FTIR. It was found that the cubic phase is present only in BN films deposited with UV nanosecond pulses. The absence of cubic phase in BN films deposited by femtosecond ablation is supposed to be due to high laser irradiance which causes the removal of unevaporated material from a soft target such as h-BN.",

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AU - Luculescu, C. R.

AU - Miyake, H.

AU - Sato, S.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - BN thin films were deposited using pulsed laser deposition (PLD) by irradiating a hot-pressed h-BN target with a fourth harmonic wave of a Nd:YAG laser and a fundamental wave of a Ti:Sapphire laser in a background of nitrogen gas atmosphere without any aid of energetic techniques. Si(1 0 0) wafers with smooth and chemically etched surface were used as substrates. The films were characterized by SEM, XPS and FTIR. It was found that the cubic phase is present only in BN films deposited with UV nanosecond pulses. The absence of cubic phase in BN films deposited by femtosecond ablation is supposed to be due to high laser irradiance which causes the removal of unevaporated material from a soft target such as h-BN.

AB - BN thin films were deposited using pulsed laser deposition (PLD) by irradiating a hot-pressed h-BN target with a fourth harmonic wave of a Nd:YAG laser and a fundamental wave of a Ti:Sapphire laser in a background of nitrogen gas atmosphere without any aid of energetic techniques. Si(1 0 0) wafers with smooth and chemically etched surface were used as substrates. The films were characterized by SEM, XPS and FTIR. It was found that the cubic phase is present only in BN films deposited with UV nanosecond pulses. The absence of cubic phase in BN films deposited by femtosecond ablation is supposed to be due to high laser irradiance which causes the removal of unevaporated material from a soft target such as h-BN.

KW - Femtosecond laser pulse

KW - PLD

KW - c-BN

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