Abstract
We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnOx films. Comparison of the spatial distribution of the film characteristics between RMS and conventional magnetron sputtering revealed that film quality near erosion area is better than the rest presumably due to the heating from plasma. It was also revealed that this spatial distribution is smaller for RMS than conventional magnetron sputtering, which can be another merit of RMS.
| Original language | English |
|---|---|
| Pages (from-to) | 760-763 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 43 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Jan 1 |
| Event | 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 2012 Jun 3 → 2012 Jun 8 |
Keywords
- DC magnetron sputter
- InGaZnO
- Rotation Magnet Sputtering
- TFT
ASJC Scopus subject areas
- Engineering(all)
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Hiroe, A., Goto, T., Sugawa, S., & Ohmi, T. (2012). Deposition of a-ingaznox by rotation magnet sputtering. Digest of Technical Papers - SID International Symposium, 43(1), 760-763. https://doi.org/10.1002/j.2168-0159.2012.tb05895.x