Deposition of a-ingaznox by rotation magnet sputtering

Akihiko Hiroe; Tetsuya Goto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1002/j.2168-0159.2012.tb05895.x

Deposition of a-ingazno_x by rotation magnet sputtering

Akihiko Hiroe, Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnO_x films. Comparison of the spatial distribution of the film characteristics between RMS and conventional magnetron sputtering revealed that film quality near erosion area is better than the rest presumably due to the heating from plasma. It was also revealed that this spatial distribution is smaller for RMS than conventional magnetron sputtering, which can be another merit of RMS.

Original language	English
Pages (from-to)	760-763
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	43
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb05895.x
Publication status	Published - 2012
Event	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 2012 Jun 3 → 2012 Jun 8

Keywords

DC magnetron sputter
InGaZnO
Rotation Magnet Sputtering
TFT

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1002/j.2168-0159.2012.tb05895.x

Cite this

@article{ea97fa56168445f49a280bd5af117178,

title = "Deposition of a-ingaznox by rotation magnet sputtering",

abstract = "We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnOx films. Comparison of the spatial distribution of the film characteristics between RMS and conventional magnetron sputtering revealed that film quality near erosion area is better than the rest presumably due to the heating from plasma. It was also revealed that this spatial distribution is smaller for RMS than conventional magnetron sputtering, which can be another merit of RMS.",

keywords = "DC magnetron sputter, InGaZnO, Rotation Magnet Sputtering, TFT",

author = "Akihiko Hiroe and Tetsuya Goto and Shigetoshi Sugawa and Tadahiro Ohmi",

note = "Publisher Copyright: {\textcopyright} 2012 SID.; 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

year = "2012",

doi = "10.1002/j.2168-0159.2012.tb05895.x",

language = "English",

volume = "43",

pages = "760--763",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

}

TY - JOUR

T1 - Deposition of a-ingaznox by rotation magnet sputtering

AU - Hiroe, Akihiko

AU - Goto, Tetsuya

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2012

Y1 - 2012

N2 - We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnOx films. Comparison of the spatial distribution of the film characteristics between RMS and conventional magnetron sputtering revealed that film quality near erosion area is better than the rest presumably due to the heating from plasma. It was also revealed that this spatial distribution is smaller for RMS than conventional magnetron sputtering, which can be another merit of RMS.

AB - We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnOx films. Comparison of the spatial distribution of the film characteristics between RMS and conventional magnetron sputtering revealed that film quality near erosion area is better than the rest presumably due to the heating from plasma. It was also revealed that this spatial distribution is smaller for RMS than conventional magnetron sputtering, which can be another merit of RMS.

KW - DC magnetron sputter

KW - InGaZnO

KW - Rotation Magnet Sputtering

KW - TFT

UR - http://www.scopus.com/inward/record.url?scp=85075653787&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075653787&partnerID=8YFLogxK

U2 - 10.1002/j.2168-0159.2012.tb05895.x

DO - 10.1002/j.2168-0159.2012.tb05895.x

M3 - Conference article

AN - SCOPUS:85075653787

VL - 43

SP - 760

EP - 763

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - 1

T2 - 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012

Y2 - 3 June 2012 through 8 June 2012

ER -