Deposition of a-ingaznox by rotation magnet sputtering

Akihiko Hiroe, Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnOx films. Comparison of the spatial distribution of the film characteristics between RMS and conventional magnetron sputtering revealed that film quality near erosion area is better than the rest presumably due to the heating from plasma. It was also revealed that this spatial distribution is smaller for RMS than conventional magnetron sputtering, which can be another merit of RMS.

Original languageEnglish
Pages (from-to)760-763
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume43
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1
Event49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
Duration: 2012 Jun 32012 Jun 8

Keywords

  • DC magnetron sputter
  • InGaZnO
  • Rotation Magnet Sputtering
  • TFT

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Deposition of a-ingazno<sub>x</sub> by rotation magnet sputtering'. Together they form a unique fingerprint.

  • Cite this