TY - JOUR
T1 - Deposition of α-Al2O3films on Ti(C, N)-based cermet substrate by laser chemical vapor deposition using a diode laser
AU - You, Yu
AU - Ito, Akihiko
AU - Tu, Rong
AU - Goto, Takashi
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2011/7
Y1 - 2011/7
N2 - α-Al2O3film was first deposited on Ti(C, N)-based cermet substrate by laser chemical vapor deposition (LCVD) in a CO 2H2 atmosphere. The effects of atmosphere, laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the crystal phase and microstructure were investigated.α- and γ-phase mixture film was prepared at T dep = 833 K. Single phaseα-Al2O3film was obtained at Tdep = 903 K. The surface morphology ofα-Al 2O3film changed from a cauliflower-like to a granular-like structure with increasing Tdep and decreasing Ptot. α-Al2O3film with a well-developed facet structure was obtained at Ptot = 0.6 kPa and Tdep = 933 K.
AB - α-Al2O3film was first deposited on Ti(C, N)-based cermet substrate by laser chemical vapor deposition (LCVD) in a CO 2H2 atmosphere. The effects of atmosphere, laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the crystal phase and microstructure were investigated.α- and γ-phase mixture film was prepared at T dep = 833 K. Single phaseα-Al2O3film was obtained at Tdep = 903 K. The surface morphology ofα-Al 2O3film changed from a cauliflower-like to a granular-like structure with increasing Tdep and decreasing Ptot. α-Al2O3film with a well-developed facet structure was obtained at Ptot = 0.6 kPa and Tdep = 933 K.
KW - Laser chemical vapor deposition
KW - Oxidization
KW - Ti(C, N)-based cermet
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U2 - 10.2109/jcersj2.119.570
DO - 10.2109/jcersj2.119.570
M3 - Article
AN - SCOPUS:79960127912
VL - 119
SP - 570
EP - 572
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 1391
ER -