Deposition condition and pinhole defect density of CrNx (1≥ x ≥ 0) Thin films formed by ion-beam-enhanced deposition

Hirotsugu Kondo, Noboru Akao, Nobuyoshi Hara, Katsuhisa Sugimoto

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In order to produce a CrNx (1 ≥ x ≥ 0) thin film with a tow pinhole defect density using an ion-beam-enhanced deposition method, the effect of deposition conditions, such as the N2 gas flow rate, the beam current, the accelerator voltage, and the beam voltage of enhancement source, on the pinhole defect density was examined. CrNx thin films were deposited on type 304 stainless steel substrates, and then anodic polarization carves of CrNx-coated steels were measured in a deaerated 0.05 M H2SO4 + 0.005 M KSCN solution. Pinhole defect density was evaluated by the ratio of the critical passivation current density of CrNx-coated steel to that of noncoated steel. It was found that the pinhole defect density was decreased with increasing the beam voltage of the enhancement source. The lowest pinhole defect density, 0.005 area %, was obtained by the following conditions: N2 flow rate 5 sccm, Ar flow rate 3 sccm, beam current 20 mA, beam voltage 200 V, accelerator voltage 600 V, and film thickness 65 nm.

Original languageEnglish
Pages (from-to)B60-B67
JournalJournal of the Electrochemical Society
Issue number2
Publication statusPublished - 2003 Feb 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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