Deposition behavior and substrate dependency of ALD MnOx diffusion barrier layer

K. Matsumoto, K. Maekawa, H. Nagai, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We investigated the possibility of applying an ALD method to form a Cu diffusion barrier layer of MnOx in an attempt to develop a deposition process which would not be influenced by absorbed water in a substrate. The MnOx formed by ALD using (EtCp)2Mn and H2O had the following features. (1) Capability of thickness control of the MnO x layer by changing the ALD cycle number. (2) Capability of the ALD-MnOx formation on low-k dielectrics by surface modification. (3) Good adhesion of the Cu/ALD-MnOx/SiOCH structure showing a fracture toughness of 0.3 MPa·m1/2. (4) Good diffusion barrier property for the thickness of over 1 nm. (5) Minimizing via resistance increase accompanied by the formation of MnOx on Cu.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013
DOIs
Publication statusPublished - 2013 Nov 4
Event2013 16th IEEE International Interconnect Technology Conference, IITC 2013 - Kyoto, Japan
Duration: 2013 Jun 132013 Jun 15

Publication series

NameProceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013

Other

Other2013 16th IEEE International Interconnect Technology Conference, IITC 2013
CountryJapan
CityKyoto
Period13/6/1313/6/15

ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering

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