Deposition behavior and diffusion barrier property of CVD MnOx

K. Matsumoto, K. Neishi, H. Itoh, H. Sato, S. Hosaka, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Chemical vapor deposition of MnOx (CVD-MnOx) was performed on blanket substrates as well as patterned interconnect structures. A conformal layer of MnOx was formed by the CVD-MnOx on SiO2 within a contact hole with a uniform thickness of 3 to 4 nm. Excellent diffusion barrier property was obtained after annealing at 400 °C. In contrast, the CVD-MnOx on Cu formed solid solution with Cu. The solute Mn was migrated towards the interface of Cu/SiO2 to form MnOx.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages197-199
Number of pages3
DOIs
Publication statusPublished - 2009 Oct 1
Event2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan
Duration: 2009 Jun 12009 Jun 3

Publication series

NameProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Other

Other2009 IEEE International Interconnect Technology Conference, IITC 2009
Country/TerritoryJapan
CitySapporo, Hokkaido
Period09/6/109/6/3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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