Using x-ray photoemission spectroscopy (XPS) and current-voltage (I-V) measurements of Hg contacts we show that the surface electron accumulation layer of In2O3 can be removed by an oxygen plasma treatment. For the untreated sample, XPS measured a downward band bending toward the surface and a conduction band peak, and the I-V curve was linear which indicated the presence of a surface accumulation layer. After the treatment an upward bending, the absence of the conduction band peak, and a nonlinear I-V curve indicated the absence of the surface accumulation layer. The sheet resistance of the surface accumulation layer of >45 kω was deduced from the increase of the total sheet resistance upon the treatment. The removal of the surface electron accumulation layer opens up the possibility to use Schottky contacts for electrical characterization and device applications of semiconducting In2 O3.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)