Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in an MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 °C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (0 0 1) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at Ta=450 °C in a pseudo-spin-valve MTJ.

Original languageEnglish
Pages (from-to)1937-1939
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar

Keywords

  • CoFeB
  • MgO barrier
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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