Dependence of tunnel magnetoresistance effect on fe thickness of perpendicularly magnetized L1 0-Mn 62Ga 38/Fe/MgO/ CoFe junctions

Takahide Kubota, Qinli Ma, Shigemi Mizukami, Xianmin Zhang, Hiroshi Naganuma, Mikihiko Oogane, Yasuo Ando, Terunobu Miyazaki

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30 Citations (Scopus)

Abstract

The tunnel magnetoresistance (TMR) ratio in a magnetic tunnel junction (MTJ) with an L1 0-Mn 62Ga 38/Fe/MgO/CoFe structure was considerably improved by Fe layer insertion. A maximum TMR ratio of 24% was observed in an MTJ with a Fe thickness of 1.1nm at room temperature, which corresponded to a 57% TMR ratio in the case of a complete antiparallel magnetization configuration. Fe layer thickness dependences of the magnetization curve and TMR effect were also investigated. It was revealed that the magnetization of Fe on 30-nm-thick MnGa could be fixed in a perpendicular direction when the thickness of the Fe was below 2.0 nm.

Original languageEnglish
Article number43003
JournalApplied Physics Express
Volume5
Issue number4
DOIs
Publication statusPublished - 2012 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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